The 2SC5066FT is a silicon NPN epitaxial planar transistor designed for VHF/UHF low‑noise amplification. Key electrical parameters such as collector‑base voltage, collector‑emitter voltage, and transition frequency are listed for design use.
The document also includes handling and reliability notes, specifying maximum ratings, storage temperature range, and cautions against use in high‑stress or safety‑critical applications. Users are advised to consult Toshiba's reliability handbooks for detailed derating information. This manual is written in Japanese.
| Collector‑Base Voltage (VcBO) | 20 V |
|---|---|
| Collector‑Emitter Voltage (VcEO) | 12 V |
| Emitter‑Base Voltage (Vgmo) | 3 V |
| Maximum Collector Current (Ic) | 30 mA |
| Maximum Base Current (Ib) | 15 mA |
| Power Dissipation (Pc) | 100 mW |
| Transition Frequency (fT) | 5.7 GHz |
| Noise Figure (NF) | 1.1 dB |
| Output Capacitance (Cob) | 0.7 pF |
| Storage Temperature (Tstg) | -35 °C to 125 °C |
The maximum collector‑base voltage is 20 V.
The transistor has a transition frequency of approximately 5.7 GHz.
The device can be stored from –35 °C up to 125 °C.
The noise figure is specified as 1.1 dB.