2SC5096FT is a silicon NPN low noise transistor from Toshiba. It features excellent noise characteristics, high insertion power gain and wide operating temperature range.
The 2SC5096FT is an NPN epitaxial planar transistor designed for low‑noise amplification in the VHF‑UHF range. It offers a noise figure of 1.8 dB at 2 GHz and high gain, making it suitable for microwave applications.
The datasheet lists absolute maximum ratings, detailed microwave and electrical characteristics, and handling guidelines. Reliability notes advise careful design to avoid high‑temperature or high‑current stress and to follow Toshiba’s semiconductor reliability handbook. This manual is written in Japanese.
| Collector‑Base Voltage (V_CBO) | 20 V |
|---|---|
| Collector‑Emitter Voltage (V_CEO) | 8 V |
| Emitter‑Base Voltage (V_EBO) | 1.5 V |
| Collector Current (I_C) | 15 mA |
| Collector Power Dissipation (P_C) | 100 mW |
| Maximum Junction Temperature (T_j) | 125 °C |
| Storage Temperature Range (T_stg) | −55 °C to 125 °C |
| Transition Frequency (f_T) | 7–10 GHz |
The transition frequency f_T ranges from 7 GHz to 10 GHz.