Philips BLF1043 UHF Power LDMOS Transistor Product Specification


Philips BLF1043 UHF Power LDMOS Transistor Product Specification - cover page
Brand
Philips
Category
MOSFET
Document type
Datasheet
Language
English
Pages
13
File format
PDF
Published
23 September, 2011
Updated
29 September, 2023
Model
BLF1043
MD5 checksum
2425B1DE52F4DA7DFD5B58E566DB0A6C

About this manual

The Philips BLF1043 is a 10 W LDMOS power transistor designed for base station applications at frequencies from HF to 1000 MHz. It operates in class-AB mode with a supply voltage of 26 V and a quiescent current of 85 mA, delivering typical two-tone performance of 18.5 dB gain, 40% efficiency, and -31 dBc intermodulation distortion at 960 MHz.

The device features an SOT538A SMD package with no internal matching for broadband operation, excellent thermal stability, and ruggedness capable of withstanding a 10:1 VSWR load mismatch. The datasheet includes limiting values, thermal characteristics, electrical characteristics, a 960 MHz class-AB test circuit with component list, and impedance data.

What's inside

  • Features
  • Pinning
  • Applications
  • Description
  • Quick Reference Data
  • Limiting Values
  • Thermal Characteristics
  • Characteristics
  • Application Information
  • Test Circuit

Specifications

Storage temperature range-65 to +150 °C
Maximum junction temperature200 °C
Typical two-tone output power (PEP)10 W
Typical two-tone power gain18.5 dB
Typical two-tone efficiency40%
Typical two-tone IMD-31 dBc
Package typeSOT538A SMD
Ruggedness (VSWR)10:1
Operating frequency rangeHF to 1000 MHz
Supply voltage (typical)26 V

Frequently asked questions

What package does the BLF1043 use?

The BLF1043 uses an SOT538A SMD package.

What is the typical two-tone performance at 960 MHz?

At 26 V supply and 85 mA quiescent current, the typical two-tone output power is 10 W PEP with 18.5 dB gain, 40% efficiency, and intermodulation distortion below 31 dBc.

What is the thermal resistance from junction to heatsink?

The thermal resistance from junction to heatsink is 9 K/W.

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