The Philips BLA1011-2 is a silicon N-channel enhancement mode lateral D-MOS transistor designed for avionics applications in the 1030 to 1090 MHz frequency range. It is encapsulated in a 2-lead flangeless ceramic surface-mounted package (SOT538A) with the common source connected to the mounting base, eliminating DC isolators and reducing common mode inductance.
The device offers high power gain, easy power control, and excellent ruggedness, capable of withstanding a load mismatch of VSWR 5:1. Key specifications include a maximum drain-source voltage of 75 V, drain current of 2.2 A, and total power dissipation of 10 W at 25 °C. Typical RF performance at 36 V delivers over 2 W output power with greater than 16 dB gain.
| Drain-source voltage (max) | 75 V |
|---|---|
| Gate-source voltage (max) | ±15 V |
| Drain current (DC) (max) | 2.2 A |
| Total power dissipation (at 25 °C) | 10 W |
| Storage temperature range | -65 to +150 °C |
| Junction temperature (max) | 200 °C |
| Thermal impedance (junction to mounting base) | 1 K/W |
| Thermal resistance (mounting base to heatsink) | 6.5 K/W |
| Drain-source breakdown voltage | 75 V |
| Gate-source threshold voltage | 2–5 V |
| Drain-source leakage current | 0.1 mA |
| On-state drain current | 2.8 A |
| Gate leakage current | 40 nA |
| Forward transconductance | 0.5 S |
| Drain-source on-state resistance | 1.2 Ω |
| Input capacitance | 11 pF |
| Output capacitance | 9 pF |
| Feedback capacitance | 0.5 pF |
| RF frequency range | 1030–1090 MHz |
| Load mismatch ruggedness (VSWR) | 5:1 |
The BLA1011-2 operates in the 1030 to 1090 MHz frequency range for avionics applications.
The maximum drain-source voltage is 75 V.
It uses a ceramic surface-mounted package with 2 leads, designated SOT538A.
The thermal impedance is 1 K/W.