RN1401～RN1406 is a NPN type silicon transistor launched by Toshiba. It has two bias resistors inside, which can be used for switching, inverter, interface and driver circuits. It has the advantages of small size and convenient assembly.
The RN1401‑RN1406 series are silicon NPN epitaxial transistors with built‑in bias resistors, intended for inverter and interface circuits. The integrated resistors reduce component count, enabling smaller and easier‑to‑assemble designs.
The document provides absolute maximum ratings, typical electrical parameters, and characteristic curves for each part number. It also includes handling notes, package identification, and safety warnings for reliable use in various electronic applications. This manual is written in Japanese.
| Collector‑Emitter Voltage (VCE max) | 50 V |
|---|---|
| Base‑Emitter Voltage (VBE max) | 5 V (RN1405, RN1406) |
| Collector Current (IC max) | 100 mA |
| Power Dissipation (PC max) | 200 mW |
| Junction Temperature (Tj max) | 150 °C |
| hFE (DC current gain) | 80‑120 (typical) |
The collector‑emitter voltage rating is 50 V.
Each transistor can handle up to 100 mA of collector current.
The devices are rated for a maximum junction temperature of 150 °C.