The TLP209D is a gallium‑arsenide infrared emitting diode optically coupled to a photo‑MOS FET in an SOP‑8 package. It offers low off‑state current and low output capacitance, making it suitable for high‑frequency measurement instruments.
The document lists absolute maximum ratings, recommended operating conditions, detailed electrical characteristics, isolation and switching parameters, and restrictions on product use to ensure reliable design implementation.
| Peak Off‑State Voltage | 200 V (min) |
|---|---|
| Trigger LED Current | 3 mA (max) |
| On‑State Current | 50 mA (max) |
| On‑State Resistance | 50 Ω (max) |
| Output Capacitance | 20 pF (max) |
| Isolation Voltage | 1500 Vrms (min) |
| Supply Voltage | 160 V |
| Operating Temperature Range | -20 °C to 60 °C |
The maximum forward current (IF) is 50 mA.
Recommended operating temperature is from –20 °C to 60 °C.