The TLP191B is a small‑outline GaAs photocoupler that combines an infrared LED with a series‑connected photo‑diode array, intended for MOSFET gate‑drive applications. It is supplied in a surface‑mount package and includes a shunt resistor for current limiting.
Key electrical characteristics include a forward current of 50 mA, isolation voltage of 2500 Vrms, forward voltage around 1.4 V at 10 mA, and switching times under 0.2 ms. The device operates from –40 °C to 80 °C and requires a lead‑soldering temperature of 260 °C for 10 s.
| Forward current (IF) max | 50 mA |
|---|---|
| Isolation voltage (min) | 2500 Vrms |
| Reverse voltage (VR) | 3 V |
| Junction temperature (Tj) max | 125 °C |
| Lead soldering temperature (10 s) | 260 °C |
The device provides at least 2500 Vrms isolation voltage.
Lead soldering should be performed for 10 seconds at 260 °C.