The 2SD471 is an NPN silicon epitaxial transistor designed for low‑frequency power amplification, such as audio‑frequency power amplifiers, low‑voltage radios and cassette equipment. It is optimized for low‑power output applications.
The document lists absolute maximum ratings, electrical characteristics, typical characteristic curves, and package dimensions. Key parameters include collector‑base voltage of 30 V, collector‑emitter voltage of 25 V, and a continuous collector current of 1 A (1.5 A pulsed). Thermal limits and storage temperature ranges are also provided. This manual is written in Japanese.
| Collector‑Base Voltage (Vcbo) | 30 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 25 V |
| Emitter‑Base Voltage (Vebo) | 5.0 V |
| Continuous Collector Current (Ic) | 1.0 A |
| Pulse Collector Current (Ic pulse) | 1.5 A |
| Total Power Dissipation (Pd) | 1.0 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature (Tstg) | -55 °C to 150 °C |
The datasheet specifies a continuous collector current of 1.0 A.
It can be stored from –55 °C up to 150 °C.
It is intended for low‑frequency power amplification such as audio‑frequency power amplifiers, low‑voltage radios and cassette equipment.