The HMC349LP4C is a high isolation non-refl ective DC to 4 GHz GaAs MESFET SPDT switch in a low cost leadless surface mount package. The switch is ideal for cellular/PCS/3G basestation applications yielding 60 to 65 dB isolation, low 0.9 dB insertion loss and +52 dBm input IP3. Power handling is excellent up through the 3.5 GHz WLL band with the switch offering a P1dB compression point of +31 dBm. On-chip circuitry allows a single positive voltage control of 0/+5 Volts at very low DC currents. An enable input (EN) set to logic high will put the switch in an “all off” state.
The HMC349LP4C is a high isolation non-reflective DC to 4 GHz GaAs MESFET SPDT switch manufactured by Hittite Microwave Corporation. It is designed for low cost leadless surface mount applications and is ideal for basestation infrastructure, MMDS, CATV/CMTS, and test instrumentation.
| Frequency Range | DC - 4.0 GHz |
|---|---|
| Isolation (RFC to RF1/RF2) | 67 dB @ 1 GHz |
| Input Power for 1 dB Compression | +31 dBm |
| Package Type | 16 mm 2 Leadless QFN SMT Package |
| Operating Temperature | -40 to +85 °C |
The switch operates from DC to 4.0 GHz.
The switch provides 67 dB of isolation at 1 GHz.
The input power for 1 dB compression is +31 dBm.