This document describes the HMC506LP4 GaAs InGaP HBT MMIC VCO, which includes an integrated resonator, negative resistance device, varactor diode, and buffer amplifier. The product covers a frequency range of 7.8 to 8.7 GHz and exhibits excellent phase noise performance, making it suitable for low noise applications.
The HMC506LP4 is a GaAs/InGaP heterojunction bipolar transistor (HBT) MMIC VCO with an integrated resonator, varactor diode and buffer amplifier. It operates from 7.8 GHz to 8.7 GHz, delivers up to +14 dBm output power and runs on a single +3 V supply drawing about 77 mA.
The device is supplied in a lead‑less QFN 4 × 4 mm package with a ground paddle that must be RF‑ and DC‑grounded. Pin functions, absolute maximum ratings, and an evaluation PCB (part number 105706) are detailed, and ordering information is provided for Hittite Microwave Corporation.
| Frequency Range | 7.8 - 8.7 GHz |
|---|---|
| Typical Output Power | +14 dBm |
| Phase Noise | -103 dBc/Hz @100 kHz |
| Supply Current | 77 mA |
| Tune Voltage Range | 1 – 11 V |
| Output Return Loss | 7 dB |
| Package | QFN 4 x 4 mm |
It requires a single +3 V supply and draws about 77 mA typical.
The typical output power is +14 dBm.
It covers 7.8 GHz to 8.7 GHz.
Evaluation board part number 105706 is available from Hittite; request it using that number.