Vishay Siliconix AN804 P-Channel MOSFET Application Note

AN804 introduces Vishay Siliconix's p-channel MOSFETs for high-side switching applications.


Vishay Siliconix AN804 P-Channel MOSFET Application Note - cover page
Brand
Vishay
Category
Other Electronics
Document type
Application Note
Language
English
Pages
4
File format
PDF
File size
40 KB
Published
09 August, 2012
Updated
30 September, 2023
MD5 checksum
8CD399FA17F5C6E4D431BE969D7DD4D5

About this manual

The document explains that while n-channel MOSFETs are often preferred due to lower resistivity, p-channel devices are essential for specific high-side switching tasks. It details how a p-channel MOSFET can be used with an n-channel device to simulate a high-current, high-power CMOS arrangement.

What's inside

  • High-Side Switching
  • Switching Ground-Return Loads
  • Totem-Pole Arrangement
  • Gate Drive Techniques
  • Crossover Current Reduction

Frequently asked questions

What gate-source potential is required to turn on a p-channel MOSFET?

To turn on, the p-channel MOSFET requires a negative gate-source potential.

What is the maximum drain-source on-resistance for the TP0610T* device?

The maximum drain-source on-resistance for the TP0610T* is 10 ohms.

What is the minimum breakdown voltage for the VP0300L device?

The minimum breakdown voltage for the VP0300L is -30 volts.

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