AN804 introduces Vishay Siliconix's p-channel MOSFETs for high-side switching applications.
The document explains that while n-channel MOSFETs are often preferred due to lower resistivity, p-channel devices are essential for specific high-side switching tasks. It details how a p-channel MOSFET can be used with an n-channel device to simulate a high-current, high-power CMOS arrangement.
To turn on, the p-channel MOSFET requires a negative gate-source potential.
The maximum drain-source on-resistance for the TP0610T* is 10 ohms.
The minimum breakdown voltage for the VP0300L is -30 volts.