This document provides the absolute maximum ratings and electrical characteristics of the TIP140T/141T/142T NPN Epitaxial Silicon Darlington Transistor manufactured by Fairchild Semiconductor Corporation.
This document provides technical specifications for the Fairchild Semiconductor TIP140T, TIP141T, and TIP142T NPN epitaxial silicon Darlington transistors. These devices feature monolithic construction with built-in base-emitter shunt resistors and are available in TO-220 packages. Key electrical characteristics include a minimum DC current gain (hFE) of 1000 at VCE = 4V and IC = 5A, with collector currents up to 10A DC and 15A pulse.
| Package Type | TO-220 |
|---|---|
| Device Type | NPN Epitaxial Silicon Darlington Transistor |
| Collector Current (DC) | 10 A |
| Collector Current (Pulse) | 15 A |
| Collector Dissipation (Tg=25°C) | 80 W |
| Junction Temperature | 150 °C |
| DC Current Gain (Min.) | 1000 |
| Collector-Emitter Saturation Voltage (Typ.) | 2 V |
The minimum DC current gain is 1000 when VCE is 4V and IC is 5A.
The maximum collector current (DC) is 10A and (Pulse) is 15A.
The maximum junction temperature is 150°C.