Datasheet for Fairchild FMC6G20US60 IGBT module, detailing electrical, thermal characteristics and specifications.
The FMC6G20US60 is an insulated‑gate bipolar transistor (IGBT) power module from Fairchild Semiconductor. It is designed for motor control, UPS and general inverter applications where short‑circuit ruggedness is required. The module includes a built‑in three‑phase rectifier and offers high‑speed switching with low saturation voltage.
Key specifications include a 600 V collector‑emitter breakdown voltage, 20 A continuous collector current, 5.7 W maximum power dissipation, and a short‑circuit withstand time of 10 µs at 100 °C. Thermal resistance is 2.19 °C/W (junction‑to‑case) and the module weighs 60 g. The package code is 21PM‑AA.
| Gate‑Emitter Voltage | ±20 V |
|---|---|
| Collector Current (continuous) | 20 A |
| Collector Current (pulsed) | 40 A |
| Saturation Voltage (VCE(sat)) | 2.2 V @ IC=20 A, VGE=15 V |
| Maximum Power Dissipation | 5.7 W @ TC=25 °C |
| Short‑Circuit Withstand Time | 10 µs @ TC=100 °C |
| Junction‑to‑Case Thermal Resistance (IGBT) | 2.19 °C/W |
| Isolation Voltage | 2500 V (1 min, AC) |
| Weight | 60 g |
| Package Code | 21PM-AA |
The typical VCE(sat) is 2.2 V when IC = 20 A and VGE = 15 V.
It can endure a short‑circuit for 10 µs at a case temperature of 100 °C.
The package code is 21PM‑AA.