STP21N06L is an N-channel enhancement mode low threshold power MOS transistor with features like low on-resistance, 100% avalanche tested, low gate charge, logic level compatible input, and 175℃ operating temperature. It is suitable for applications such as high current, high-speed switching, solenoid and relay drivers, regulators, DC-DC and DC-AC converters, motor control, audio amplifiers, and automotive environments.
This document provides technical specifications for the STP21N06L and STP21N06LFI N-channel enhancement mode low threshold power MOS transistors. The devices feature avalanche rugged technology and are designed for high current, high speed switching applications such as motor control, audio amplifiers, and automotive environments.
| Drain-source Voltage | 60 V |
|---|---|
| Drain Current (continuous) at Tj = 25 °C | 21 A |
| Total Dissipation at Tj = 25 °C | 80 W |
| Operating Junction Temperature | 175 °C |
| Package Type | TO-220 ISOWATT220 |
The device is suitable for high current, high speed switching, solenoid and relay drivers, regulators, DC-DC & DC-AC converters, motor control, audio amplifiers, and automotive environments.
Yes, the device features logic level compatible input.
The maximum operating junction temperature is 175 °C.