This document describes the features and characteristics of the N-Channel PowerTrench® MOSFET products, models FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0, including maximum voltage and current, low Miller charge, low QRR body diode, and UIS capability.
This document is a datasheet for the Fairchild FDP047AN08A0, FDI047AN08A0, and FDH047AN08A0 N-Channel PowerTrench MOSFETs. The devices are rated for 75V drain-to-source voltage, 80A continuous drain current, and have a typical on-resistance of 4.7mOhm at 10V gate drive. They are qualified to AEC Q101 for automotive use.
| Drain to Source Voltage | 75 V |
|---|---|
| Continuous Drain Current | 80 A |
| Power Dissipation | 310 W |
| Operating and Storage Temperature | -55 to 175 °C |
| Thermal Resistance Junction to Case | 0.48 °C/W |
Applications include 42V Automotive Load Control, Starter/Alternator Systems, Electronic Power Steering Systems, and DC-DC converters.
The MOSFET is capable of withstanding a single pulse avalanche energy of 475 mJ.