This application note introduces a power factor corrector using MDmeshTM II and SiC diode. The qualitative and quantitative improvements in terms of switching performances and converter efficiency are analyzed by comparing the dynamic characteristics of traditional components and the new generation of super-junction MOSFET and SiC diodes.
The document details an experimental board designed to demonstrate the electrical and thermal performance improvements achieved by combining new generation super-junction MOSFETs with SiC Schottky diodes in AC-DC PFC circuits. The design targets a 200 W continuous output power with a regulated voltage of 400 V, operating across a universal AC input range.
The application note describes a design for a 200 W continuous PFC converter.
At startup, the maximum peak current in the diode is about 40 A.
The STPSC806D SiC diode has a very fast recovery time of 15 ns typical.