MOC8021M and MOC8050M are photodarlington-type optically coupled optocouplers with high BVCEO, high current transfer ratio, no base connection, UL recognized and IEC 60747-5-2 approved.
This document is a datasheet for the Fairchild Semiconductor MOC8021M and MOC8050M photodarlington optocouplers. These devices consist of a gallium arsenide infrared emitting diode coupled with a silicon darlington phototransistor, designed for applications requiring high current transfer ratios and improved noise immunity due to the lack of a base connection.
The datasheet provides absolute maximum ratings, electrical characteristics, and isolation ratings for both models. It includes typical performance curves for parameters such as forward voltage, current transfer ratio, and switching times, along with package dimensions for through-hole and surface mount configurations.
| Collector-Emitter Voltage (MOC8021M) | 50 V |
|---|---|
| Collector-Emitter Voltage (MOC8050M) | 80 V |
| Current Transfer Ratio (MOC8021M) | 1,000 % |
| Current Transfer Ratio (MOC8050M) | 500 % |
| Operating Temperature | -40 to +100 °C |
| Continuous Collector Current | 150 mA |
| Input-Output Isolation Voltage | 7500 Vac(pk) |
They are suitable for appliances, measuring instruments, I/O interfaces for computers, programmable controllers, portable electronics, and solid state relays.
No, these devices feature no base connection for improved noise immunity.