This document is QEE113 940nm GaAs LED datasheet
The document describes the Fairchild Semiconductor QEE113, a 940nm Gallium Arsenide (GaAs) light emitting diode encapsulated in a clear epoxy sidelooker package. It is designed for applications requiring infrared illumination with a medium wide emission angle of 50 degrees and includes a gray stripe on the top side for identification.
The datasheet provides absolute maximum ratings, electrical and optical characteristics at 25°C, and typical performance curves illustrating relationships between wavelength, forward current, ambient temperature, and radiant intensity. It also details package dimensions and notes compatibility with the matched photosensor QSE113.
| Peak Emission Wavelength | 945 nm |
|---|---|
| Emission Angle | 50° |
| Continuous Forward Current | 50 mA |
| Reverse Voltage | 5 V |
| Power Dissipation | 100 mW |
The QEE113 has a typical peak emission wavelength of 945 nm when tested at 20 mA.
The device can handle a continuous forward current up to 50 mA.
You must derate the power dissipation linearly by 1.33 mW for every degree Celsius above 25°C.