This document provides the parameters and characteristics of the QEB421 surface mount infrared light emitting diode, including peak emission wavelength, spectral bandwidth, emission angle, forward voltage, reverse current, radiant intensity, radiant flux, etc.
This document is a datasheet for the Fairchild Semiconductor QEB421, a surface mount infrared light emitting diode (LED). The device utilizes an AlGaAs material with a peak emission wavelength of 880 nm and is housed in a PLCC-2 package. It is designed for high-power applications with a wide emission angle of 120 degrees.
| Peak Emission Wavelength | 880 nm |
|---|---|
| Emission Angle | 120° |
| Package Type | PLCC-2 |
| Operating Temperature | -55 to +100 °C |
| Continuous Forward Current | 100 mA |
| Reverse Voltage | 5 V |
| Power Dissipation | 180 mW |
The peak emission wavelength is 880 nm.
The maximum continuous forward current is 100 mA.
The operating temperature range is -55 to +100 °C.