MOCD223M is a dual channel phototransistor small outline surface mount optocoupler, with U.L. and VDE recognition, 500% minimum high current transfer ratio, 30 volts minimum BVCEO, and 2500 VAC(rms) guaranteed high input-output isolation voltage. It can be used in interfacing and coupling systems of different potentials and impedances, general purpose switching circuits, monitor and detection circuits
The MOCD223M is a dual channel phototransistor small outline surface mount optocoupler consisting of two gallium arsenide infrared emitting diodes coupled to two monolithic silicon phototransistor darlington detectors. It is designed for high density applications requiring low input current and eliminates the need for through-the-board mounting.
Key features include a minimum Current Transfer Ratio (CTR) of 500% at 1mA, a guaranteed Collector-Emitter breakdown voltage of 30 Volts, and an Input-Output Isolation Voltage of 2500 V AC(rms). The device is available in a standard SOIC-8 footprint compatible with dual wave, vapor phase, and IR reflow soldering processes.
| Current Transfer Ratio (CTR) Min. | 500% |
|---|---|
| Collector-Emitter Breakdown Voltage | 30 V |
| Input-Output Isolation Voltage | 2500 Vac(rms) |
| Package Type | SOIC-8 |
| Operating Temperature Range | -40 to +100 °C |
The minimum Current Transfer Ratio (CTR) is 500% at an input forward current of 1mA.
Yes, it is compatible with dual wave, vapor phase, and IR reflow soldering processes.
The device can operate in an ambient temperature range up to +100 °C.