MBR0530T3 is a semiconductor device manufactured by Toshiba. It is a plastic SOD-123 package Schottky diode, which is ideal for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical to the system.
This document is a technical datasheet for the Motorola MBR0530T1 Schottky Barrier Rectifier. The device utilizes the Schottky Barrier principle with a large area metal-to-silicon power diode, making it ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection diodes in surface mount applications where compact size and weight are critical. It features a plastic SOD-123 package designed for optimal automated board assembly.
| Average Rectified Forward Current | 0.5 Amps |
|---|---|
| Non-repetitive Peak Surge Current | 5.5 Amps |
| Operating Junction Temperature | -65 to +125 °C |
| Thermal Resistance Junction to Ambient | 340 °C/W |
The device uses a plastic SOD-123 package.
The operating junction temperature ranges from -65 to +125 °C.
The MBR0530T1 is available in a 3,000 per 7 ″ reel with 8 mm tape.