Key facts
- Brand
- Diodes
- Model
- 2N7002W
- Industry
- Industrial
- Documents
- 2
- Languages
- EN
- Last added
- 2012-07-12
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Diodes Incorporated 2N7002W N-Channel Enhancement Mode FET Datasheet
This document is a technical datasheet for the Diodes Incorporated 2N7002W N-channel enhancement mode field effect transistor. The device features low on-resistance, low gate threshold voltage, and fast switching speed in an ultra-small SOT-323 surface mount package.
Read onlineDiodes 2N7002W specifications
| Drain-Source Voltage | 60 V |
|---|---|
| Package Type | SOT-323 |
| Continuous Drain Current (Ta = 25°C) | 1.5 A |
| Total Power Dissipation | 200 mW |
| Operating Temperature Range | -55 to +150 °C |
Source: Diodes Incorporated 2N7002W N-Channel Enhancement Mode FET Datasheet
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Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum total power dissipation rating?
The maximum total power dissipation is 200 mW.
From: Diodes Incorporated 2N7002W N-Channel Enhancement Mode FET Datasheet
What is the operating temperature range for this transistor?
The device operates from -55 to +150 °C.
From: Diodes Incorporated 2N7002W N-Channel Enhancement Mode FET Datasheet
What is the maximum drain-source voltage?
The maximum drain-source voltage (Vdss) for this device is 60 V.
From: Diodes Incorporated 2N7002W N-Channel Enhancement Mode FET Datasheet
What is the continuous drain current at 25°C?
The continuous drain current (Id) is 115 mA when the ambient temperature is 25°C.
From: Diodes Incorporated 2N7002W N-Channel Enhancement Mode FET Datasheet