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This document is a technical datasheet for the TEMIC BUD86 and BUD87 series of Silicon NPN High Voltage Switching Transistors. These components utilize multi-diffusion technology to achieve high reverse voltages, glass passivation, and short switching times. They are designed for applications such as electronic lamp ballast circuits and switch-mode power supplies.
| Collector-emitter voltage (BUD86) | 400 V |
|---|---|
| Collector-emitter voltage (BUD87) | 450 V |
| Collector peak current | 1 A |
| Total power dissipation (Tcase = 60°C) | 20 W |
| Junction temperature | 150 °C |
| Storage temperature range | -65 to +150 °C |
These transistors are intended for use in electronic lamp ballast circuits and switch-mode power supplies.
The maximum collector-emitter voltage for the BUD86 is 400 V.