PML260SN is a standard level N-channel enhancement mode field-effect transistor from Philips Semiconductors, packaged in a surface-mounted plastic package using TrenchMOS technology.
The document describes the Philips PML260SN, a surface-mounted plastic package Field-Effect Transistor (FET) utilizing TrenchMOS technology. Key features include a low profile footprint, very low thermal impedance, and low on-state resistance.
This datasheet provides comprehensive technical specifications for the device, including limiting values such as a maximum drain-source voltage of 200 V and a continuous drain current up to 8.8 A at 25 °C. It also details electrical characteristics like gate threshold voltage, capacitance, and switching times, along with thermal resistance data and safe operating area graphs.
| Package type | HVSON8 plastic thermal enhanced very thin small outline package |
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The device is intended for primary side switching and DC-to-DC converters, as well as portable appliances.
The maximum drain-source voltage is 200 V when the junction temperature is between 25 °C and 150 °C.
The maximum continuous drain current is 8.8 A when the junction temperature is 25 °C and the gate-source voltage is 10 V.
The total power dissipation limit is 50 W when the mounting base temperature is 25 °C.