The TLC220x is a precision, low-noise operational amplifier using Texas Instruments Advanced LinCMOS process. These devices combine the noise performance of the lowest-noise JFET amplifiers with the dc precision available previously only in bipolar amplifiers. The Advanced LinCMOS process uses silicon-gate technology to obtain input offset voltage stability with temperature and time that far exceeds that obtainable using metal-gate technology. In addition, this technology makes possible input impedance levels that meet or exceed levels offered by top-gate JFET and expensive dielectric-isolated devices. The combination of excellent dc and noise performance with a common-mode input voltage range that includes the negative rail makes these devices an ideal choice for high-impedance, low-level signal-conditioning applications in either single-supply or split-supply operation.
The document describes the TLC220x, TLC220xA, TLC220xB, and TLC220xY devices as precision, low-noise operational amplifiers utilizing Texas Instruments' Advanced LinCMOS process. These components combine the noise performance of JFET amplifiers with the DC precision typically found in bipolar amplifiers.
| Input Noise Voltage (Max at 10 Hz) | 30 nV/VHz |
|---|---|
| Input Bias Current (Typical) | 1 pA |
| Input Offset Voltage Stability | 0.5 uV/°C Typ |
The typical input offset voltage stability with temperature is 0.5 uV/°C.
The C-suffix operates from 0°C to 70°C, B-suffix from -40°C to 85°C, and M-suffix from -55°C to 125°C.