The KSD1616/1616A is an NPN epitaxial silicon transistor that features high performance, low power consumption and high reliability. This transistor is suitable for audio power amplifiers and medium speed switching applications.
This document is a technical datasheet for the Fairchild Semiconductor KSD1616 and KSD1616A devices. These are NPN epitaxial silicon transistors designed for audio frequency power amplification and medium-speed switching applications. The text provides absolute maximum ratings, electrical characteristics at 25°C, and typical performance curves.
| Collector-Emitter Voltage (KSD1616A) | : 60 V |
|---|---|
| Emitter-Base Voltage | 6 V |
| Collector Current (DC) | 1 A |
| Collector Power Dissipation | 0.75 W |
| Junction Temperature | 150 °C |
The typical DC current gain (hFE) for the KSD1616 ranges from 135 to 600.
The typical DC current gain (hFE) for the KSD1616A ranges from 135 to 400.
The device can be stored between -55°C and 150°C.