This document is a datasheet for the Micro BC368 (NPN) and BC369 (PNP) transistors. These are TO8RE complementary silicon epitaxial transistors intended for audio frequency applications. The document provides absolute maximum ratings and electrical characteristics for the devices.
| Collector Current-Continuous | 1A |
|---|---|
| Collector-Emitter Voltage | 20V |
| Emitter-Base Voltage | 5V |
| Total Power Dissipation | 0.8W |
| Operating Junction and Storage Temperature Range | -55 to 150°C |
| Collector-Emitter Breakdown Voltage (Min) | 25 V |
| Collector-Emitter Breakdown Voltage (Typ) | 20 V |
| Emitter-Base Breakdown Voltage | 5 V |
| Collector Cutoff Current (Max) | 10 pA |
| Emitter Cutoff Current (Max) | 10 pA |
| Collector-Emitter Saturation Voltage (Typ) | 0.5 V |
| Base-Emitter Voltage (Typ) | 0.6 V |
| Base-Emitter Voltage (Max) | 1 V |
| D.C. Current Gain HFE (Min) | 50 |
| D.C. Current Gain HFE (Typ) | 85 |
| Current Gain-Bandwidth Product | 65 MHz |
| Output Capacitance | 30 pF |
They are designed for audio frequency applications.
The maximum continuous collector current is 1A.
The maximum total power dissipation is 0.8W.
The operating junction and storage temperature range is -55 to 150°C.