This document is a datasheet for the BC351, a PNP silicon planar transistor manufactured by Micro Electronics Ltd. The device is specifically designed for use in AF small signal amplifier stages.
The datasheet provides absolute maximum ratings, including a collector-emitter voltage of 30V and a continuous power dissipation of 300mW. It also lists electro-optical characteristics such as DC current gain (HFE) and current gain bandwidth product (fT) under specific test conditions.
| Collector-Emitter Voltage | 30V |
|---|---|
| Collector-Base Voltage | 40V |
| Emitter-Base Voltage | 5V |
| Collector Current | 100mA |
| Continuous Power Dissipation | 300mW |
| Operating Junction Temperature | -55 to + 150°C |
| DC Current Gain (Group L) | 40 to 120 |
| DC Current Gain (Group A) | 110 to 220 |
| DC Current Gain (Group B) | 200 to 450 |
| Current Gain Bandwidth Product | 125 MHz |
The BC351 is a PNP silicon planar transistor designed for AF small signal amplifier stages.
The operating and storage junction temperature ranges from -55 to +150°C.