This is a 5V, byte alterable E2PROM product. It has simple byte and page write functions, single 5V power supply, no external high voltage or VPP control circuits, self-timed, no erase before writing, no complex programming algorithms, no overerase problem, low power CMOS: active 60mA, standby 500µA, software data protection, protects data against system level inadvertent writes, high speed page write capability, highly reliable Direct Write™ cell, endurance: 100,000 write cycles, data retention: 100 years, early end of write detection - DATA Polling - Toggle Bit Polling
The document describes the X28HC256, a second-generation high-performance CMOS 32K x 8 bit nonvolatile memory. It is fabricated with proprietary textured poly floating gate technology and operates on a single 5V supply without requiring external high voltage or programming control circuits.
Key features include simple byte and page write operations, self-timed functionality, and early end-of-write detection via DATA Polling and Toggle Bit methods. The device offers software data protection to prevent inadvertent writes during power-up and power-down sequences.
| Memory Capacity | 32K x 8 Bit |
|---|---|
| Access Time | 70ns |
| Supply Voltage | 5 Volt |
| Active Power Consumption | 60mA |
| Standby Current | 500uA |
| Endurance | 100,000 Write Cycles |
| Data Retention | 100 Years |
No, it operates with a single 5V supply and does not require external high voltages or Vpp control circuits.
The entire memory can typically be rewritten in less than 0.8 seconds using page write capability.
It offers a software controlled data protection feature that can automatically protect data without external circuits after the first write operation.