This product is a 5-volt only in-system reprogrammable Flash memory with features such as fast read access time, internal program control and timer, sector architecture, fast erase cycle time, byte-by-byte programming, hardware data protection, low power dissipation, typical 10,000 write cycles, green (Pb/Halide-free) packaging option.
The document describes the Atmel AT49F002A(N)(T), a 2-megabit in-system reprogrammable Flash memory organized as 262,144 words by 8 bits. Manufactured with advanced nonvolatile CMOS technology, the device offers access times of 55 ns and power dissipation of 137 mW over the industrial temperature range. It features a single-voltage operation requiring only 5V for both read and reprogramming operations.
The device utilizes a sector architecture consisting of one 16K-byte boot block, two 8K-byte parameter blocks, and four main memory blocks. It includes hardware data protection and a boot block programming lockout feature to secure user code. Programming is performed on a byte-by-byte basis with a typical time of 20 ps per byte, and the device supports a typical 10,000 write cycles.
| Memory Capacity | 2 megabits (256K x 8) |
|---|---|
| Access Time | 55 ns |
| Operating Voltage | 5V |
| Erase Cycle Time | 4 Seconds |
| Active Current | 25 mA |
| Standby Current | 100 pA |
| Write Cycles | 10,000 |
Yes, the device supports 5V reprogramming without requiring high input voltages.
The boot block can be locked out to prevent reprogramming using a specific command sequence.
The lockout can be overridden by applying a 12V + 0.5V signal to the RESET pin.