AT49BV040 is a 4M-bit single-voltage 2.7-volt Battery-Voltage™ flash memory with the following features: Single voltage for read and write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV), Fast read access time - 120 ns, Internal program control and timer, 16K bytes boot block with lockout, Fast chip erase cycle time - 10 seconds, Byte-by-Byte programming - Typical 30µs/Byte, Hardware data protection, DATA polling for end of program detection, Low power dissipation - 25 mA active current - 50µA CMOS standby current, Typical 10,000 write cycles, Small packaging - 8 x 8 mm CBGA - 8 x 14 mm V-TSOP.
This document is a technical datasheet for the Atmel AT49BV040 and AT49LV040 series of 4-megabit Flash memories. These devices are organized as 524,288 words of 8-bits each and operate on a single voltage supply ranging from 2.7V to 3.6V (for BV models) or 3.0V to 3.6V (for LV models). The datasheet details the device's features, including fast read access times of 120 ns and low power dissipation.
| Memory Capacity | 4-megabit (524,288 words of 8-bits) |
|---|---|
| Operating Voltage | 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) |
| Read Access Time | 120 ns |
| Chip Erase Cycle Time | 10 seconds |
| Active Current (BV) | 25 mA |
| Standby Current | 50 nA |
The device contains a user-enabled boot block protection feature of 16K bytes.
The device supports a typical endurance of 10,000 write cycles.