This Logic Level Insulated Gate Bipolar Transistor (IGBT) features Gate–Emitter ESD protection, Gate–Collector overvoltage protection from SMARTDISCRETES monolithic circuitry for usage as an Ignition Coil Driver.
This document is a technical datasheet for the Motorola MGP20N14CL, an internally clamped N-Channel Insulated Gate Bipolar Transistor (IGBT). The device features SMARTDISCRETES™ monolithic circuitry providing Gate-Emitter ESD protection and Gate-Collector overvoltage protection, making it suitable for use as an Ignition Coil Driver. Key characteristics include a 20 Ampere continuous collector current rating and a clamped voltage of 135 Volts.
| Collector Current (Continuous) | 20 A |
|---|---|
| Gate-Emitter On Voltage | 1.9 V |
| Total Power Dissipation (TO-220) | 150 W |
| Operating Temperature Range | -55 to 175 °C |
The device supports a continuous collector current of 20 Amperes when the case temperature is 25°C.
The device operates and stores within a temperature range from -55 to 175 °C.
The specified mounting torque is 10 Ibfein, which equals 1.13 Nem.