This document provides data on Motorola's Small-Signal Transistors, FETs and Diodes devices, including PNP silicon surface mount transistors and transistors with a monolithic bias resistor network. The product simplifies circuit design, reduces board space, and decreases component count by integrating the external resistor bias network into a single device.
The document describes the MUN5111DW1T1 series, which consists of PNP silicon surface mount transistors featuring a monolithic bias resistor network. This design integrates a series base resistor and a base-emitter resistor into a single device, simplifying circuit design and reducing board space. The series is available in the SOT-363 package, ideal for low-power applications where board space is a premium.
| Package Type | SOT-363 |
|---|---|
| Collector-Base Voltage | -50 V |
| Collector Current | -100 mA |
| Operating Temperature Range | -65 to +150 °C |
| Thermal Resistance (Junction-to-Ambient) | 833 °C/W |
The device supports a maximum collector current of -100 mA.
Two devices are housed in an 8 mm SOT-363 package ideal for low-power surface mount applications where board space is at a premium.
The device operates and stores between -65°C and +150°C.