Motorola Small–Signal Transistors, FETs and Diodes Device Data is a document about Motorola's small-signal transistors, FETs, and diodes. The document describes the features and characteristics of these miniature surface mount MOSFETs, including low rDS(on) value, high efficiency, and energy conservation. It is ideal for use in small power management circuits, such as dc-dc converters, portable and battery-powered products, etc.
This document is a technical datasheet for the Motorola MMBF2201NT1, an N-channel enhancement-mode MOSFET designed with low on-resistance (rDS(on)) to minimize power loss. It belongs to the GreenLine portfolio of devices utilizing the High Density TMOS process and is intended for use in small power management circuitry such as DC-DC converters.
| Drain-to-Source Voltage (Vpss) | 20 Vdc |
|---|---|
| Continuous Drain Current @ Ta = 25°C | 300 mAdc |
| Total Power Dissipation @ Ta = 25°C | 150 mw |
| Operating and Storage Temperature Range | -55 to 150 °C |
| Static Drain-to-Source On-Resistance (Typical) | 1.0 Ohms |
Typical applications are dc-de converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.
The soldering temperature and time shall not exceed 260°C for more than 10 seconds.