The datasheet is about ADN2821_2/5/10 series products. The series is a high performance SiGe 3.3V power supply trans-impedance amplifier (TIA) optimized for small size, low power consumption, high performance and high integration.
The ADN2821 is a series of compact, high-performance SiGe 3.3V power supply Transimpedance Amplifiers (TIAs) optimized for small form factor 10Gbps Metro-Access and Ethernet PD-TIA modules. The series features low input referred noise current and a range of transimpedance gains suitable for driving a typical CDR or transceiver directly. With a minimum bandwidth of 8 GHz, it enables up to 11.1 Gbps operation.
| Bandwidth | 8 GHz min |
|---|---|
| Input Noise Current Density | 12 pA/√Hz |
| Optical Sensitivity | -19 dBm |
| Power Dissipation | 150 mW |
| Differential Output Swing | 400 mV p-p min |
| Input Overload | 3.25 dBm @ 10 dB ER |
| Low-F cutoff (ADN2821_10) | 25 kHz w/Cir = 0.5 nF |
| On-Chip PD filter Resistance | 200 Ω |
| On-Chip PD filter Capacitance | 20 pF |
| RSSI voltage and current ratio | 0.8 V/mA |
| Die Size | 0.65 mm x 1.20 mm |
| Operating Ambient Temperature Range | -40°C to +95°C |
| Maximum Junction Temperature | +165°C |
It is optimized for 10.7 Gbps Optical Modules, SONET/SDH OC-192/STM-64 and 10 GbE Receivers, Transceivers, and Transponders.
The device operates with a 3.3V +0.3V power supply.
The minimum bandwidth is 8 GHz, which enables up to 11.1 Gbps operation.
The die size is 0.65 mm x 1.20 mm.