The document describes the features and characteristics of the PUMH2 NPN resistor-equipped double transistor, including built-in bias resistors, no mutual interference, simplification of circuit design, and reduction of components and board space. It is especially suitable for space reduction in interface and driver circuits, as well as inverter circuit configurations without the use of external resistors.
The document describes the Philips PUMH2, an NPN resistor-equipped double transistor designed to simplify circuit design by integrating built-in bias resistors. This component is particularly suitable for space reduction in interface and driver circuits, allowing for inverter configurations without external resistors.
Key technical data includes limiting values such as a maximum collector-emitter voltage of 50V per transistor and a total power dissipation of up to 300mW for the device. The component is housed in an SC-88 (SOT363) plastic surface-mounted package with six leads.
| Collector-base voltage (VCBO) | 50 V |
|---|---|
| Collector-emitter voltage (VCEO) | 50 V |
| Emitter-base voltage (VEBO) | 10 V |
| Output current (DC) per transistor | 100 mA |
| Total power dissipation per device | 300 mW |
| Storage temperature (Tstg) | -65 to +150 °C |
| Package type | SC-88 (SOT363) |
The transistors have built-in bias resistors R1 and R2 with a typical value of 47 k Ω each.
It is especially suitable for space reduction in interface and driver circuits.