The KSD882 is a NPN silicon transistor with a maximum collector-emitter voltage of 30V, a maximum collector current of 3A, a maximum emitter-base voltage of 5V, a maximum power dissipation of 10W, and a maximum junction temperature of 150℃.
This document is a technical datasheet for the Fairchild Semiconductor KSD88244, an NPN epitaxial silicon transistor. The device is described as a low-speed switching component and serves as a complement to the KSB772 model.
The datasheet provides absolute maximum ratings, electrical characteristics, typical performance curves, package dimensions for the TO-126 case, and trademark information. It includes specifications such as collector current up to 3A DC and junction temperature limits of 150°C.
| Collector-Base Voltage (Vceo) | 40 V |
|---|---|
| Collector-Emitter Voltage (Vebo) | 30 V |
| Emitter-Base Voltage (Veb) | 5 v |
| Collector Current (DC) | 3 A |
| Collector Dissipation (Tc=25°C) | 10 W |
| Junction Temperature | 150 °C |
The device supports a maximum collector-emitter voltage of 30 V and a DC collector current of 3 A.
The absolute maximum junction temperature is rated at 150 °C.