This document describes the features and characteristics of Fairchild Semiconductor's Si9926DY Dual N-Channel 2.5V Specified PowerTrench MOSFET. It uses Fairchild Semiconductor's advanced PowerTrench process and is optimized for power management applications with a wide range of gate drive voltage (2.5V-10V).
The document describes the Si9926DY, a dual N-Channel 2.5V specified PowerTrench MOSFET optimized for power management applications such as battery protection circuits and load switches. The device features a wide operating voltage range from 2.5V to 10V.
| Drain-Source Voltage (Vdss) | 20 V |
|---|---|
| Continuous Drain Current (Id) | 6.5 A |
| Power Dissipation for Dual Operation | 2 W |
| Operating Junction Temperature Range | -55 to +150 °C |
| Gate Threshold Voltage (Vgs) | 0.5 V to 1.5 V |
The maximum continuous drain current is 6.5 A.
The device is optimized for use in battery protection circuits with a range of 2.5V to 10V.
The maximum continuous drain current is rated at 6.5 A.
The device operates and stores within a junction temperature range of -55 to +150 °C.