This document describes the features and characteristics of the semiconductor product MSM511000C/CL, including high integration, high-speed operation, and low-power consumption.
The MSM511000C/CL is a 1,048,576-word x 1-bit dynamic RAM fabricated using Oki's silicon-gate CMOS technology. It features high integration, high-speed operation, and low-power consumption, utilizing a quadruple-layer polysilicon/single-layer metal process.
| Capacity | 1,048,576-word x 1-bit |
|---|---|
| Technology | Silicon-gate CMOS |
| Power Supply | Single 5 V (+10%) |
| Refresh Rate (Standard) | 512 cycles/8 ms |
| Refresh Rate (Low Power) | 512 cycles/64 ms |
| Package Options | 26/20-pin SOJ or 20-pin ZIP |
| Operating Temperature | 0 to 70 °C |
The maximum access time (trac) for the -45 speed rank is 45 ns.
Yes, the device includes fast page mode and read modify write capability.