FJNS4211R is a PNP type of transistor produced by Philips Semiconductors. Its maximum absolute rating is VCBO=-40V, VCEO=-40V, VEBO=-5V, IC=-100mA, PC=300mW, TJ=150°C, TSTG=-55~150°C. Its typical characteristic parameters are BVCBO=-40V, BVCEO=-40V, ICBO=-0.1µA, hFE=100-600, VCE(sat)=-0.3V, Cob=5.5pF, fT=200MHz, R=15-29KΩ.
The document describes the FJNS4211R, a PNP epitaxial silicon transistor featuring a built-in bias resistor of 22kΩ. It is designed for use in switching applications, inverters, interface circuits, and driver circuits, serving as a complement to the FJINS3211R model.
| Collector-Base Voltage (Vocpo) | -40 V |
|---|---|
| Collector-Emitter Voltage (VoEo) | -40 Vv |
| Emitter-Base Voltage (VeBo) | -5 v 3 R |
| Collector Current (lo) | -100 mA |
| Collector Power Dissipation (Po) | 300 mW |
| Junction Temperature (Ty) | 150 °C |
| Input Resistor | 22 KQ |
The device includes a builtin bias resistor with a resistance of 22kΩ.
Yes, the FJNS4211R is described as a complement to the FJINS3211R.
It is intended for use in switching circuits, inverters, interface circuits, and driver circuits.