This document presents the features and characteristics of the Surface Mount RF Schottky Barrier Diodes HSMS-282x series, including low turn-on voltage, low FIT rate, six-sigma quality level, various package configurations, and high isolation provided by grounded center leads. These diodes are designed for both analog and digital applications, with common uses such as mixing, detecting, switching, sampling, clamping, and wave shaping.
This document provides technical specifications and application information for the Agilent HSMS-282x family of Surface Mount RF Schottky Barrier Diodes. These devices are designed for both analog and digital applications, including mixing, detecting, switching, sampling, clamping, and wave shaping.
The series offers single, dual, and quad versions in unique SOT-363 packages to increase flexibility and save board space. Key features include a low turn-on voltage as low as 0.34 V at 1 mA, a six-sigma quality level, and matched diodes for consistent performance.
| Forward Current (1 us Pulse) | 1 Amp |
|---|---|
| Peak Inverse Voltage | 15 V |
| Junction Temperature | 150 °C |
| Storage Temperature | -65 to 150 °C |
| Thermal Resistance (SOT-23/SOT-143) | 500 °C/W |
| Thermal Resistance (SOT-323/SOT-363) | 150 °C/W |
| Effective Carrier Lifetime | 100 ps maximum |
Typical applications include mixing, detecting, switching, sampling, clamping, and wave shaping.
The turn-on voltage can be as low as 0.34 V at 1 mA.
The HSMS-282K Grounded Center Leads provide up to 10 dB higher isolation.
The maximum junction temperature is 150 °C.