This document describes the applications, external dimensions, electrical characteristics, and markings of PTZ3.6B diodes.
This document provides technical specifications for the ROHM PTZ3.6B, a small power mold type (PMDS) silicon epitaxial planar zener diode. It is designed with high ESD tolerance and features dimensions compliant with JEDEC SOD-106 standards.
| Package Type | Small power mold type (PMDS) |
|---|---|
| Structure | Silicon epitaxial planar |
| JEDEC Standard | SOD-106 |
| Power dissipation | 1000 mW |
| Junction temperature | -55 to +150 C |
| Zener voltage (Typical) | 3.6 V |
The typical zener voltage (Vz) for the PTZ3.6B is 3.600 V.
The absolute maximum power dissipation is 1000 mW.
The Zener voltage must be measured 40ms after power is supplied.