This document describes the features and characteristics of the 2SC536 NPN plastic-encapsulated transistor produced by Jiangsu Changjiang Electronics Technology Co., Ltd. It includes power dissipation, collector current, collector-base voltage, etc. The transistor is suitable for various operating temperature ranges.
This document is a technical datasheet for the 2SC536 NPN transistor manufactured by Jiangsu Changjiang Electronics Technology. The device is housed in a TO-92 plastic package and features a power dissipation of 400 mW at Tamb=25°C.
| Power dissipation | 400 mW (Tamb=25°C) |
|---|---|
| Collector current | 100 mA |
| Collector-base voltage | 40 V |
| Operating and storage junction temperature range | -55°C to +150°C |
The maximum power dissipation is 400 mW when the ambient temperature is 25°C.
The device operates and stores within a range of -55°C to +150°C.
The transistor supports a collector current of 100 mA.