M8050 NPN TRANSISTOR (TO-92) is a power switching type transistor produced by Jiangsu Changjiang Electronics Technology Co., Ltd. Its maximum rated collector-emitter voltage is 25V, maximum rated collector-base voltage is 40V, maximum rated emitter-base voltage is 6V, and maximum continuous collector current is 800mA. The working temperature range is -55-150℃.
This document is a datasheet for the M8050 NPN transistor manufactured by Jiangsu Changjiang Electronics Technology Co., Ltd. It provides key features including a power dissipation of 625 mW and maximum ratings such as a collector-base voltage of 40 V and a collector current of 800 mA.
The datasheet details electrical characteristics at Tamb=25°C, including breakdown voltages, current gains (hFE) ranging from 80 to 400 depending on the rank, and transition frequency up to 150 MHz. It also includes typical characteristic curves for collector current, saturation voltage, power dissipation, and current gain.
| Power dissipation | 625 mW |
|---|---|
| Collector-Base Voltage | 40 V |
| Collector-Emitter Voltage | 25 V |
| Emitter-Base Voltage | 6 V |
| Collector Current | 800 mA |
| Junction Temperature | -55-150 °C |
| Transition frequency | 150 MHz |
The maximum continuous collector current is 800 mA.
The power dissipation is 625 mW at Tamb=25°C.
The DC current gain (hFE) ranges from 80 to 400 depending on the rank.