The CY7C197 is a high-performance CMOS static RAM organized as 256K words by 1 bit. It features high speed, low power consumption, and automatic power-down.
The CY7C197 is a high‑performance CMOS static RAM organized as 256 K words by 1 bit. It offers a 12 ns access time, low active power (≈880 mW) and standby power (≈220 mW), TTL‑compatible I/O, and an automatic power‑down mode that reduces consumption by 75 % when deselected.
The document provides full electrical characteristics, timing diagrams, switching waveforms, and ordering information. It lists the available 24‑lead DIP and SOJ packages, their speed grades, and the corresponding part numbers for each speed option.
| Maximum Access Time | 12 ns |
|---|---|
| Maximum Operating Current | 150 mA |
| Maximum Standby Current | 30 mA |
| Supply Voltage Range | -0.5 V to +7.0 V |
| Input HIGH Voltage | 2.2 V |
| Package Type (12 ns speed) | 24‑Lead (300‑Mil) Molded DIP (P13) |
| Package Type (12 ns speed, SOJ) | 24‑Lead Molded SOJ (V13) |
The fastest speed grade (‑12) has a maximum access time of 12 ns.
It includes an automatic power‑down feature that reduces power consumption by 75 % when the device is deselected.
The device is offered in a 24‑lead (300‑mil) molded DIP (P13) and a 24‑lead molded SOJ (V13).
The maximum standby current is 30 mA.