This is the introduction document of Honeywell's HX6408 512k x 8 STATIC RAM. The product is a high-performance 524,288 word x 8-bit static random access memory with optional industry-standard functionality. It is fabricated with Honeywell's radiation hardened Silicon On Insulator (SOI) technology, and is designed for use in low voltage systems operating in radiation environments.
The HX6408 is a 512 K × 8 radiation‑hardened static RAM fabricated with Honeywell's RICMOS™ V SOI technology. It operates from a single 3.3 V + 0.3 V supply over a military temperature range of –55 °C to +125 °C and consumes less than 30 mW at 1 MHz in write mode.
The document provides functional diagrams, pin definitions, radiation hardness ratings, absolute maximum ratings, DC electrical characteristics, timing parameters for asynchronous read and write cycles, and packaging information for the 36‑lead flat‑pack version.
| Supply Voltage Range | 3.0 V – 3.6 V |
|---|---|
| Operating Temperature Range | -55 °C to +125 °C |
| Typical Read Power Consumption | <14 mW @ 1 MHz |
| Typical Write Power Consumption | <30 mW @ 1 MHz |
| Standby Power Consumption | <5 mW |
| Package Type | 36‑lead flat pack |
| Data Retention Voltage | 2.0 V |
| Soft Error Rate | <1 × 10⁻⁶ Upsets/bit‑day |
The device operates with a single supply of 3.0 V to 3.6 V.
It works from –55 °C up to +125 °C.
Typical read power consumption is less than 14 mW at 1 MHz.