The ATF‑35076, ATF‑35176, and ATF‑35376 are Pseudomorphic High Electron Mobility Transistors (PHEMT) covering 2‑18 GHz. They are supplied in a cost‑effective ceramic microstrip package and are suited for low‑noise cascade stages, with the ATF‑35076 delivering the best noise performance.
Key features include a typical noise figure of 0.75 dB at 12 GHz, associated gain of 11 dB, and optional tape‑and‑reel packaging. Absolute maximum ratings list a drain‑source voltage of +4 V and a total power dissipation of 295 mW.
| Noise Figure (typical at 12 GHz) | 0.75 dB |
|---|---|
| Associated Gain (typical at 12 GHz) | 11 dB |
The ATF‑35076 has a typical noise figure of 0.75 dB at 12 GHz.
It provides an associated gain of about 11 dB at 12 GHz.
Yes, a tape‑and‑reel packaging option is offered.