The SD1013-3 is a 28 V epitaxial silicon NPN planar transistor designed for FM applications in the 108‑152 MHz band. It provides up to 10 W output power, 10 dB gain, and typical efficiency of 55 % in a common‑emitter configuration. Key electrical ratings include a collector‑base voltage of 65 V, collector‑emitter voltage of 35 V (max 65 V), collector current of 1 A, and total power dissipation of 13 W.
Thermal data shows a junction‑to‑case resistance of 13.5 °C/W and a maximum junction temperature of 200 °C. The package mechanical data lists dimensions for several variants, and a test fixture list is provided for characterization. Application curves illustrate power output versus frequency and input power.
| Frequency range | 108‑152 MHz |
|---|---|
| Supply voltage | 28 V |
| Power output | 10 W |
| Power gain | 10 dB |
| Efficiency (typical) | 55 % |
| Collector‑Base voltage (Vcb) | 65 V |
| Collector‑Emitter voltage (Vceo) | 35 V |
| Collector‑Emitter voltage (Vces) | 65 V |
| Emitter‑Base voltage (Vebo) | 4 V |
| Maximum collector current | 1 A |
| Total power dissipation | 13 W |
| Storage temperature range | -65 °C to 150 °C |
| Maximum junction temperature | 200 °C |
| Thermal resistance (junction‑to‑case) | 13.5 °C/W |
The maximum collector current is 1 A.
It is designed for operation between 108 MHz and 152 MHz.
Typical efficiency is 55 %.
The device can deliver up to 10 W of output power.