AF6930N is a dual N-channel power MOSFET from Anachip with DC-DC application, surface mount package and ultra low on-resistance.
The AF6930N MOSFET from AnaChip is designed for DC‑DC applications and surface‑mount use. It offers a rugged dual N‑channel design with ultra‑low on‑resistance and cost‑effective performance. The device is supplied in a lead‑free SO‑8 package and includes standard marking and ordering information.
Key electrical characteristics include a 30 V drain‑source breakdown voltage, +20 V gate‑source rating, 4 A continuous drain current at 25 °C, and a typical on‑resistance of 80 mΩ. Thermal data, capacitance values, and gate‑charge curves are provided to aid designers in thermal and switching analysis.
| Drain‑Source Voltage (VDS) | 30 V |
|---|---|
| Gate‑Source Voltage (VGS) | +20 V |
| Total Power Dissipation | 9.2 W |
| Package Type | SO‑8 |
The AF6930N can withstand a drain‑source voltage of up to 30 V.
The device is supplied in an SO‑8 surface‑mount package.