The document provides ordering information and features of the products HCTS193DMSR and HCTS193KMSR from Intersil Corporation in 1999. These devices are sensitive to electrostatic discharge and require proper IC handling procedures. They utilize 3 micron radiation hardened CMOS SOS technology, with a total dose of 200K RAD (Si) and low single event upset (SEU) immunity. The products have a temperature range of -55°C to +125°C and offer significant power reduction compared to LSTTL ICs.
The HCTS193MS is a 4‑bit binary up/down counter fabricated in 3 µm radiation‑hardened CMOS SOS technology. It offers standard LSTTL‑compatible outputs, low input currents (<5 µA), and high immunity to single‑event upsets, making it suitable for space and high‑reliability applications.
The device is offered in two 16‑lead ceramic packages (SBDIP and flat‑pack) and is supported by extensive radiation, burn‑in, and reliability testing per MIL‑STD‑1835 and MIL‑STD‑883. Detailed electrical performance, timing diagrams, and test procedures are provided in the handbook.
| Total Radiation Dose | 200 kRad (Si) |
|---|---|
| Supply Voltage Range | 4.5 V to 5.5 V |
| Operating Temperature Range | -55 °C to +125 °C |
| Input Low Voltage (VIL) | 0.8 V max |
| Input High Voltage (VIH) | VCC/2 min |
It is rated for a total ionizing dose of 200 kRad (Si).
The HCTS193MS operates from 4.5 V to 5.5 V supply.
The device can operate from –55 °C up to +125 °C.